(Phys.org) —A research collaboration consisting of IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology has demonstrated the world's fastest silicon ...

Identify research insights to guide research strategy and grow your impact with our Nature Strategy reports. Actionable insights into research performance. Detailed analysis of strengths and ...

LFoundry today announced the signing of an R&D and transfer agreement with IHP microelectronics, a leading German institute for communication technologies. LFoundry will license the IHP LDMOS process ...

FRANKFURT, Germany, February 19, 2002 -- IHP, a leading microelectronics innovation center focused on wireless and broadband communications has licensed the new high-performance, low-power, 32-bit ...

X-FAB Silicon Foundries and IHP - Leibniz Institute for High Performance Microelectronics have announced a major industry-academic partnership. The objective of the cooperation between these two ...

Meylan, FRANCE and Frankfurt an der Oder, GERMANY -- June 8, 2009 – IHP, one of Germany’s largest interdisciplinary application-oriented research centers in the fields of high performance ...

PLAINVIEW, N.Y., Aug. 12, 2020 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (NASDAQ: VECO) today announced that IHP Microelectronics, based in Frankfurt, Germany, has selected Veeco’s TurboDisc® metal ...

The smallest complete radar system in the world -- measuring less than half an inch on each side -- was squeezed into a low-cost computer chip recently, a European Union team of scientists said. The ...

FRANKFURT (ODER), Germany– In a move to create 5-GHz processors for wireless local area networks, Germany's Innovations for High Performance (IHP) microelectronics institute here today announced it ...

The D-Band, ranging from 110 GHz to 170 GHz, is a candidate frequency band for beyond 5G and 6G mobile communications, as well as for future automotive radar applications. Sub-THz frequency systems ...

A research team has demonstrated the world's fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous ...